51513 tkim tc-00002922/o2407 tiim tc-00000935/60607qb tiim tc-00000728 no. a0777-1/7 http://onsemi.com semiconductor components industries, llc, 2013 may, 2013 2SK4099LS n-channel power mosfet 600v, 8.5a, 0.94 , to-220f-3fs features ? on-resistance r ds (on)=0.72 (typ.) ? input capacitance ciss=750pf ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 600 v gate to source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c 8.5 a i dpack *2 tc=25 c (our ideal heat dissipation condition)*3 6.9 a drain current (pulse) i dp pw 10 s, duty cycle 1% 34 a allowable power dissipation p d 2.0 w tc=25 c (our ideal heat dissipation condition)*3 35 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 197 mj avalanche current *5 i av 8.5 a note : * 1 shows chip capability * 2 package limited * 3 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =50v, l=1mh, i av =8.5a (fig.1) * 5 l 5mh, single pulse package dimensions unit : mm (typ) 7528-001 ordering number : ena0777c ordering & package information device package shipping memo 2SK4099LS-1e to-220f-3fs, sc-67 50pcs./tube pb-free marking electrical connection 1 3 2 k4099 lot no. 1 : gate 2 : drain 3 : source to-220f-3fs 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 2SK4099LS-1e stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2SK4099LS no. a0777-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =10ma, v gs =0v 600 v zero-gate voltage drain current i dss v ds = 480 v, v gs =0v 100 a gate to source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 35v forward transfer admittance | yfs | v ds =10v, i d = 4 a 2.7 5.4 s static drain to source on-state resistance r ds (on) i d = 4 a, v gs =10v 0.72 0.94 input capacitance ciss v ds =30v, f=1mhz 750 pf output capacitance coss 140 pf reverse transfer capacitance crss 31 pf turn-on delay time t d (on) see fig.2 16 ns rise time t r 37 ns turn-off delay time t d (off) 106 ns fall time t f 41 ns total gate charge qg v ds =200v, v gs =10v, i d =8.5a 29 nc gate to source charge qgs 5.2 nc gate to drain ?miller? charge qgd 16.5 nc diode forward voltage v sd i s =8.5a, v gs =0v 0.9 1.2 v fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit 50 50 rg v dd l 10v 0v 2SK4099LS g s d pw=10 s d.c. 1% p. g 50 g s d i d =4a r l =49.3 v dd =200v v out 2SK4099LS v in 10v 0v v in
2SK4099LS no. a0777-3/7 drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a static drain to source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a gate to source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- tc i s -- v sd ? y fs ? -- i d drain current, i d -- a switching time, sw time -- ns sw time -- i d drain to source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it12396 it12393 --50 --25 150 it12398 it12397 0.1 23 5 23 5 7 1.0 3 1.4 0.8 1.0 1.2 0.4 0.6 0.2 0.01 0.1 5 7 3 2 2 1.0 5 7 3 2 10 5 7 3 3 2 7 5 2 3 10 7 5 2 2 1.0 357 10 0 25 50 75 100 125 25 c 75 c tc= --25 c i d =4a --25 c 25 c tc=75 c tc= --25 c 25 c 75 c v ds =10v tc=75 c 25 c --25 c v gs =0v it12400 020 10 30 100 2 3 10 5 2 7 1000 3 2 3 5 7 f=1mhz 10 5152030 25 0 0 5 25 15 10 20 it12395 5.5 6.0 6.5 7.0 7.5 10 8.0 8.5 9.0 9.5 5.0 0 0.2 0.4 0.6 0.8 1.0 2.0 1.2 1.6 1.8 1.4 0 0.2 0.4 2.0 1.0 1.2 1.4 1.6 1.8 0.8 0.6 it12394 6 4 2 8 10 20 12 14 16 18 0 0 5 25 15 20 10 v gs =5v 10v 15v v ds =20v v gs =10v, i d =4a 8v 50 40 ciss crss coss 0.1 1.0 2 23 57 10 2 33 57 100 10 7 5 3 2 7 3 5 2 it12399 t d (off) t d (on) v dd =200v v gs =10v t f t r 6v tc=25 c
2SK4099LS no. a0777-4/7 total gate charge, qg -- nc gate to source voltage, v gs -- v drain to source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w a s o v gs -- qg p d -- ta p d -- tc e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 it12337 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10478 it17036 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 1.0 10 s 100 s 100ms 10ms 1ms 10 100 23 57 23 57 23 57 0 0 20 40 60 80 100 140 120 20 25 30 35 15 10 5 40 160 it12382 030 20 25 10 15 5 3 10 0 1 4 it12401 8 9 5 6 7 2 10 3 5 7 2 3 5 7 dc operation i dc (*1)=8.5a i dpack (*2)=6.9a v ds =200v i d =8.5a operation in this area is limited by r ds (on). i dp =34a(pw 10 s) * 1. shows chip capability * 2. our ideal heat dissipation condition tc=25 c single pulse
2SK4099LS no. a0777-5/7 magazine speci cation 2SK4099LS-1e
2SK4099LS no. a0777-6/7 outline drawing 2SK4099LS-1e mass (g) unit 1.8 * for reference mm
2SK4099LS ps no. a0777-7/7 note on usage : since the 2SK4099LS is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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